By J. J. Liou, A. Ortiz-Conde, F. Garcia-Sanchez (auth.)
Analysis and layout of MOSFETs: Modeling, Simulation, and ParameterExtraction is the 1st publication dedicated completely to a large spectrum of research and layout concerns relating to the semiconductor equipment known as metal-oxide semiconductor field-effect transistor (MOSFET). those matters comprise MOSFET gadget physics, modeling, numerical simulation, and parameter extraction. The dialogue of the applying of equipment simulation to the extraction of MOSFET parameters, resembling the edge voltage, powerful channel lengths, and sequence resistances, is of specific curiosity to all readers and offers a priceless studying and reference software for college students, researchers and engineers.
Analysis and layout of MOSFETs: Modeling, Simulation, and ParameterExtraction, broadly referenced, and containing greater than one hundred eighty illustrations, is an cutting edge and critical new publication on MOSFETs layout technology.
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Extra info for Analysis and Design of Mosfets: Modeling, Simulation and Parameter Extraction
Level-I model) can be obtained as follows . 88) is the threshold voltage. , no body effect). 89) is more general and is valid with the presence of body effect, provided the depletion charge accounts for the effect of Vas' Clearly, the threshold voltage is an important parameter for modeling the MOSFET. 89), such a parameter can be determined by extraction methods, which will be discussed in detail in Chapter 3.
As will be shown later, the GCA is reasonably accurate for long-channel MOSFETs. For short-channel devices, however, the GCA becomes questionable due to the strong and inseparable interaction between the x- and y-direction physical mechanisms, such as the electric field, in the channel region of such devices. Another approximation used frequently to simplify MOSFET modeling is the quasi-equilibrium approximation , which assumes that electron and hole quasi-fermi levels are nearly flat in the vertical direction due to the fact that the electron and hole currents in the vertical direction are very small.
4 VGS = 3 V I I I I I I I I - ... 4 () 'C () Q) w Q) - ... 19 : Lateral and vertical electric field versus the lateral distance. The two impulses are the large electric fields at the drain and source metallurgical junctions. 35 CHAPTER 1. MOSFET PHYSICS AND MODELING ........ 5 E ......... 0 f/) c -........ 1 V ,... 20 : Lateral and vertical drain current densities versus the lateral distance. 37) q where 4>(x = 0) ;: -4>s is the surface potential, and 4>(x = 00) ;: 4>8 is the bulk potential.